? 1/7 main product characteristics the STPAC01F2 has two outputs, one for the sig- nal detection and another one for the temperature compensation: v dcout = 0.88 v at 0.85 ghz at 10 dbm v dcout = 1.07 v at 1.85 ghz at 10 dbm vsupply = 5 v max lead free package description the STPAC01F2 is an integrated rf detector for the power control stage. it converts rf signal coming from the coupler into a dc signal usable by the digital stage. it is based on the use of two similar diodes, one providing the signal detection while the second one is used to provide a temper- ature information to thermal compensation stage. a biasing stage suppresses the detection diode drop voltage effect. target applications are cellular phones and pda using gsm, dcs, pcs, amps, tdma, cdma and 800 mhz to 1900 mhz frequency ranges. benefits the use of ipad technology allows the rf front-end designer to save pcb area and to drastically suppress parasitic inductances. STPAC01F2 rf detector for power amplifier control rev. 1 october 2004 ipad? flip-chip (8 bumps) table 1: order code part number marking STPAC01F2 ra figure 1: pin configuration (ball side) gnd1 rfin gnd1 gnd1 gnd2 bias dc out v temp 321 a b c figure 2: functional diagram coupler gnd2 gnd1 v dcout STPAC01F2 rf input v bias v temp thermal compensation low pass filter rf detector
STPAC01F2 2/7 table 2: absolute retings (t amb = 25c) electrical characteristics (t amb = 25c) table 3: parameters related to bias voltage table 4: parameters related detection function (v bias + 2.7 v, dc output load = 100k ? ) table 5: parameters related to detection function symbol parameter and test conditions value unit v bias bias voltage 5 v p rf rf power at the rf input 20 dbm f op operating frequency range 0.8 to 2 ghz v pp esd level as per mil-std 883e method 3015.7 notice 8 (hbm) 250 v t op operating temperature range - 30 to + 85 c t stg storage temperature range - 55 to + 150 c symbol parameter test conditions min. typ. max. unit v bias operating bias voltage 2.2 3.2 v i bias bias current v bias = 3.2 v 0.5 ma symbol parameter test conditions min. typ. max. unit v dcout dc output voltage (see fig. 1, i dc = 50 a) f = 1.85 ghz, p rf = 10 dbm 0.97 1.07 1.17 v f = 1.85 ghz, p rf = - 20 dbm 1.83 1.93 2.03 f = 0.85 ghz, p rf = 10 dbm 0.78 0.88 0.98 f = 0.85 ghz, p rf = - 20 dbm 1.83 1.93 2.03 ? v dcout dc output voltage varia- tion (see fig. 8, i dc = 50 a) 0 < t amb < 70c f = 1.85 ghz, p rf = 10 dbm 0.09 v 2.2 < v bias < 3.2 v f = 1.85 ghz, p rf = 10 dbm 0.44 symbol parameter test conditions min. typ. max. unit v temp temperature output voltage (see fig. 9) i dc = 50 a 1.83 1.93 2.03 v ? v temp temperature output voltage variation (see fig. 9) i dc = 50 a, 0 < t amb < 70c 0.09 v i dc = 50 a, 2.2 < v bias < 3.2v 0.44
STPAC01F2 3/7 figure 3: application diagram the stpac01 is the first part of the power amplifier stage and provides both rf power and die tempera- ture measurements. the above figure gives the basic circuit of rf detector. a coupler located on the line between rf amplifier output and the antenna takes a part of the available power and applies it to stpac01 rf input. the rf detector and the low pass filter provide a dc voltage depending on the input power. thermal com- pensation provides a dc voltage depending on the ambient temperature. as the detection system and the thermal compensation are based on the same topology, vdcout will have the same temperature variation as vtemp. connected to a differential amplifier, the output will be a voltage directly linked to the rf input power. vdcout and vtemp must be bias with 50a dc current. this topology offers the most accurate output value as it is 100% compensated. coupler gnd2 out gnd1 v dcout i dc = 50a i dc = 50a STPAC01F2 rf input v bias v temp thermal compensation low pass filter rf detector - + figure 4: v dcout measurement circuit figure 5: v dcout versus rf input power v dcout i dc rf in v bias dc output voltage rf generator power supply current generator stpac test board multimeter 0.8 1 1.2 1.4 1.6 1.8 2 -20 -15 -10 -5 0 5 10 pin (dbm) vdcout 850mhz 1850mhz tamb = 25c ibias = 50a vbias = 2.7v
STPAC01F2 4/7 figure 6: relative variation of v dcout versus frequency (from 800 to 900 mhz) figure 7: relative variation of v dcout versus frequency (from 1800 to 1900 mhz) figure 8: temperature effect measurement circuit on v dcout figure 9: v temp measurement circuit figure 10: v temp output voltage versus ambient temperature 0.9 0.95 1 1.05 800 825 850 875 900 frequency in mhz v dcout (freq.) / v dcout (850mhz) v dcout (freq.) / v dcout (850mhz) 0.9 0.95 1 1.05 1800 1825 1850 1875 1900 frequency in mhz v dcout i dc rf in v bias dc output voltage rf generator power supply current generator stpac test board multimeter climatic chamber v temp i dc v bias temp. voltage power supply current generator stpac test board multimeter climatic chamber 1.88 1.9 1.92 1.94 1.96 1.98 0 10203040506070 tamb (c) vtemp ibias = 50a
STPAC01F2 5/7 figure 11: flip-chip package mechanical data figure 12: foot print recommendations figure 13: marking 1.57mm 50m 1.57mm 50m 315m 50 500m 50 500m 50 650m 65 copper pad diameter : 250m recommended , 300m max solder stencil opening : 330m solder mask opening recommendation : 340m min for 300m copper pad diameter 365 365 240 40 220 x y x w z w all dimensions in m e dot, st logo xx = marking z = packaging location yww = datecode (y = year ww = week)
STPAC01F2 6/7 figure 14: flip-chip tape and reel specification dot identifying pin a1 location user direction of unreeling all dimensions in mm 4 +/- 0.1 8 +/- 0.3 4 +/- 0.1 1.75 +/- 0.1 3.5 +/- 0.1 ? 1.5 +/- 0.1 0.73 +/- 0.05 xxz yww st e xxz yww st e xxz yww st e table 6: ordering information note: more informations are available in the application notes: an1235: ?flip-chip: package description and recommendations for use? an1751: "emi filters: recommendations and measurements" ordering code marking package weight base qty delivery mode STPAC01F2 ra flip-chip 3.3 mg 5000 tape & reel 7? table 7: revision history date revision description of changes 21-oct-2004 1 first issue
STPAC01F2 7/7 information furnished is believed to be accurate and reliable. however, stmicroelectronics assu mes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replac es all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered tr ademark of stmicroelectronics. all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com
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